The low-voltage scanning electron microscopy (low-kV SEM) finds new applications in semiconductor technology to detect contrast originating from the active dopant distribution and concentration in electronic devices. It may be also used to visualize highly insulating channels produced by ion damaging of semiconductors. The mechanism of Damage-Induced Voltage Alteration (DIVA) contrast in SEM images will be presented and supported with application examples.
Łukasiewicz Research Network – Institute of Electronic Materials Technology, Warsaw Poland
National Centre for Nuclear Research, NOMATEN Centre of Excellence MAB+ Division, Świerk-Otwock, Poland